Posted in | Carbon Nanotubes

AIXTRON Announces Shanghai University Have Ordered a BM R&D Reactor for Graphene Processing

Published on May 20, 2014 at 4:40 AM

AIXTRON SE today announced that Shanghai University has ordered a BM R&D reactor to be used by its Sino-Sweden Microsystem Integration Technology Center (SMIT).

AIXTRONs highly flexible R&D system for manufacturing carbon nanotubes and graphene has already shown excellent results at numerous customer sites worldwide.

Prof. Johan Liu, who is leading the graphene/nanotube research at SMIT, comments: “We will be launching extensive new research into the application of nanotubes and graphene using the BM capabilities in thermal- and plasma-based chemical vapor deposition. We chose the AIXTRON system as we achieved excellent results in our longstanding work with the BM reactor at Chalmers University in Sweden. The system has been a workhorse for similar research for the last five years, giving us consistently good results, high uptime, ease of use and process flexibility.”

Prof. Liu at SMIT will be developing next generation thermal interface/dissipating materials, heat spreaders, multi-chip interconnects and through silicon vias (TSV) for semiconductor chip packaging using the BM reactor.

The Sino-Sweden Microsystem Integration Technology Center (SMIT), a prestigious research facility established in 2003, combines expertise from Shanghai University and Chalmers University of Technology in Gothenburg (Sweden). Founded as a cross-border institution, the center conducts research on microsystem and microelectronics integration by focusing on new technology for future microsystems for industrial applications.

Chalmers University of Technology has extensive experience in the area of graphene research. The university is leading the EU’s Future Emerging Technology (FET) flagship project “Graphene”, in which AIXTRON plays a key role in the “Graphene Flagship” research initiative by contributing its sound expertise to enable high quality large-scale graphene growth through the development of next generation deposition equipment.

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