Samsung Electronics Co.,
Ltd., the world leader in advanced memory technology, announced today that
it has developed and validated the first 40-nanometer (nm) class DRAM chip and
module. This new 1-Gigabit DDR2 component (x8) and a corresponding 1-Gigabyte
800Mbps (Megabits per second) DDR2 SODIMM (small outline DRAM inline memory
module) - both to be processed at 40-nm - have been certified in the Intel Platform
Validation program for use with the Intel® GM45 series Express mobile chipsets.
"Securing extremely advanced technology and system/platform validated
operability underscores our commitment as technology leader to deploying the
most efficient means of producing DRAM in the marketplace," said Kevin
Lee, vice president, technical marketing, Samsung Semiconductor, Inc.
The migration to 40-nm class process technology is expected to accelerate the
time-to-market cycle by 50 percent - to just one year. Samsung plans to
apply its 40-nm class technology to also develop a 2Gb DDR3 device for mass
production by the end of 2009.
The new 40-nm class process technology will drive further reductions in voltage
against a 50-nm class device, which Samsung expects to translate into about
a 30 percent power savings
The finer DRAM technology node also delivers an approximately 60 percent increase
in productivity over 50-nm class process technology.
In addition, Samsung expects that its 40-nm process node will mark a significant
step toward the development of next generation, ultra-high performance DRAM
technologies such as DDR4.