Article - 27 Oct 2010
At Oxford Instruments Plasma Technology ave recently optimized the growth procedure to improve structural properties and surface morphology of thick AlN layers deposited via hydride vapor-phase...
News - 18 Apr 2010
Transistors, the cornerstone of electronics, are lossy and therefore consume
energy. Researchers from the ETH
Zürich and EPF Lausanne have developed transistors targeting high switching...
News - 22 Sep 2009
AIXTRON AG announced
today that in the third quarter 2009 the Indian Institute of Science (IISc),
India placed an order for one AIX 200/4 RF-S R+D MOCVD reactor. It will be delivered
News - 10 Sep 2009
Our society is insatiable as far as the transfer of data is concerned. Consequently,
increasingly faster and cheaper transistors are being developed. In row in recent
months, researchers from...
Article - 4 May 2013
Metal alkyl amides are important as single source CVD precursors for nitride thin films. Basic reagents such as oxygen, water, ozone can react with metal alkyl amides to produce oxide films.
Article - 3 Oct 2012
In this Insights from Industry interview, Dr Mohan Ananth, Senior
Director of Marketing and Product Management for Carl Zeiss Microscopy,
talks to Will Soutter about their new Orion NanoFab...
Article - 24 Nov 2010
In this paper we have shown that ICP-CVD can be used to deposit various materials including SiO2, SiNx,
a-Si and SiC. By using the ICP-CVD technique high quality films are deposited with high...