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Emerging Technologies Utilising Nanotechnology in Aerospace and Rocket Fuels
Several aerospace firms have programmes under way for the use of nanosized particles of aluminium or hafnium for rocket propulsion applications. The improved burn and the speed of ignition of such...
http://www.azonano.com/article.aspx?ArticleID=1648
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21 Jul 2006
American Elements Announces Expanded Hafnium Production Capacity
American Elements announced the further expansion of its hafnium separation and production facilities to meet growing demand for the metal, hafnium oxide and other hafnium containing engineered and...
http://www.azonano.com/news.aspx?newsID=4559
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26 Jul 2007
ASM International Extends Market Leadership for High-k ALD
ASM International N.V. (NASDAQ: ASMI and Euronext Amsterdam: ASM), today announced two new Pulsar® orders from leading logic customers. One system was purchased by a new customer for the development...
http://www.azonano.com/news.aspx?newsID=16151
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24 Feb 2010
Applications of Metal Alkyl Amide CVD/ALD Precursors
Metal alkyl amides are important as single source CVD precursors for nitride thin films. Basic reagents such as oxygen, water, ozone can react with metal alkyl amides to produce oxide films.
http://www.azonano.com/article.aspx?ArticleID=3426
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4 May 2013
Direct Writing of Metal Lines Less Than 5 nm Wide
A group of Beckman Institute researchers have discovered a practical method for direct writing of metal lines less than five nanometers (5 nm) wide, a big step in creating contacts to and...
http://www.azonano.com/news.aspx?newsID=20787
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2 Dec 2010
Researchers Develop New Laser Technique for Searching Unusual Isotopes
One single atom of a certain isotope of hafnium found on Earth would prove that a supernova once exploded near our solar system. The problem is how to find such an atom - among billions of...
http://www.azonano.com/news.aspx?newsID=13088
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11 Aug 2009
Oxford Instruments Plasma Technology Receives Second Order from Liverpool University
Oxford Instruments Plasma Technology (OIPT), leading manufacturer of systems for etch, deposition and growth announces a second order from Liverpool University for its OpAL Open Load...
http://www.azonano.com/news.aspx?newsID=12005
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11 Jun 2009
Taiwanese Foundry Selects ASM's Pulsar ALD Tool for Volume Manufacturing of 28 nm Node High-K Gate Dielectric Process
ASM International N.V. (NASDAQ: ASMI and Euronext Exchange in Amsterdam: ASM), announced that a Taiwanese foundry has selected ASM's Pulsar® atomic layer deposition (ALD) tool for the...
http://www.azonano.com/news.aspx?newsID=11173
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28 Apr 2009
New Precursors from Air Products Support 22 nm to 15 nm DRAM Device Production
Air Products (NYSE: APD) today introduced its new EXTREMA STO and GST precursors in support of continued advancements in Dynamic Random Access Memory (DRAM) and Phase-change Random Access Memory...
http://www.azonano.com/news.aspx?newsID=17871
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5 Jun 2010
IMEC Increases Performance of High-K Metal Gate Planar CMOS and FinFETs
At the IEEE International Electron Devices Meeting, IMEC reports significant progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide...
http://www.azonano.com/news.aspx?newsID=5513
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12 Dec 2007
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