News - 11 Nov 2008
The highly complex, technology-intensive and diverse global electronics market, valued at several billions of dollars, is expected to post a strong average annual growth rate in the short-term. Growth...
News - 18 Jun 2008
At today's VLSI Symposium, IMEC reports an improved performance for its planar CMOS using hafnium-based high-k dielectrics and tantalum-based metal gates for the 32nm CMOS node. The inverter delay...
News - 12 Dec 2007
At the IEEE International Electron Devices Meeting, IMEC reports significant progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal...
Article - 4 May 2013
Metal alkoxides of copper, tantalum, vanadium, zirconium, titanium, hafnium, and aluminum have been explored as precursors to form oxide thin films.
News - 19 Mar 2015
A research group led by Chengsi Pan and Tsuyoshi Takata at NIMS Global Research Center for Environment and Energy Based on Nanomaterials Science (GREEN), and Kazunari Domen at The University of Tokyo...
News - 2 Dec 2014
At Trinity College Dublin Professor Jonathan Coleman and his team are creating a ‘gateway technology’ in material science that, if successful, will open the door to a host of industrial...
News - 24 Oct 2013
CEA-Leti, Fraunhofer IPMS-CNT and three European SMEs, IPDiA, Picosun and SENTECH Instruments, have launched a project to industrialize 3D integrated capacitors with world-record density.
News - 29 Jan 2011
Structured surfaces have special properties. It would be desirable to make these properties switchable.
This, for example, would allow for friction and adhesion to be specifically switched on and...
News - 8 Sep 2009
Just as health-food manufacturers work on developing the best possible sodium substitutes for low-salt diets, physicists at the National Institute of Standards and Technology (NIST) have acquired new...
News - 15 Jul 2008
Applied Materials, Inc. today announced its Applied Endura® Extensa(TM) PVD1, the industry's only production-worthy system for depositing the critical barrier films for copper interconnects in...