New Polymer Material Enables Innovative DRAM Integration Concepts - New Technology

Traditional silicon integration concepts are based on a few materials like silicon, silicon oxide and silicon nitride. Using only these materials limits the integration options. Resists - also used in conventional semiconductor processes - could be a fourth alternative, but are limited since processing at higher temperatures is not possible.

Infineon co-developed a new thermally stable organic polymer combining the advantages of both worlds and demonstrated the feasibility of this organic material for a DRAM trench integration scheme. In this approach, a modified version of an organic spin-on-polymer is used with ideal gap fill properties, good planarization and temperature stability beyond 450°C. Test samples of 256M DDR DRAM chips fabricated on 140 nm ground rules show high yields. This concept demonstrates the feasibility of FEOL (Front-End Of Line) integration schemes utilizing the newly developed material. Furthermore the demonstrated integration scheme is capable of extending DRAM trenches to generations below 70nm.

Posted 10th December 2003

Date Added: Jan 2, 2004 | Updated: Jun 11, 2013
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