Pointprobe- Silicon AFM Probes from Nanoworld

The Pointprobe� is a versatile silicon AFM probe for very high resolution imaging and fits to all well-known commercial SPMs (Scanning Probe Microscopes). It consists of a single crystal silicon cantilever with integrated single crystal silicon tip. The cantilever and the tip are supported by a single crystal silicon holder. True atomic resolution has been achieved by several research facilities in UHV using the Non-Contact / TappingMode AFM probes NCH and NCL.

Type Reflex Coating Special Force Constant Res. Frequency
Contact mode CONT None or reflex n.a. 0.2 N/m 13 kHz
Contact mode (Short Cantilever) CONTSC None or reflex n.a. 0.2 N/m 25 kHz
Contact mode, Seiko or Zeiss ZEILR Reflex n.a. 1.6 N/m 27 kHz
Non-contact / tapping mode
(high frequency)
NCH None or reflex AR5, AR10, AR5T
SSS, PtIr5, DT, CDT
42 N/m 330 kHz
Non-contact / soft tapping NCST None or reflex n.a. 7.4 N/m 160 kHz
Non-contact / tapping mode
(long cantilever)
NCL None or reflex SSS, AR5, DT, CDT 48 N/m 190 kHz
Non-contact / tapping mode
(Seiko non-contact mode)
SEIHR Reflex SSS 15 N/m 130 kHz
Force modulation mode FM None or reflex DT, CDT 2.8 N/m 75 kHz
Electrostatic force microscopy EFM n.a. n.a. 2.8 N/m 75 kHz
Magnetic force microscopy
Hard magnetic (tipside)
MFMR Reflex n.a. 2.8 N/m 75 kHz
Magnetic force microscopy
Soft magnetic (tipside)
S-MFMR Reflex n.a. 2.8 N/m 75 kHz

All data are subject to change without notice.
All data are typical values, for guaranteed specifications see detailed description of probe type.

In addition, special silicon AFM probes can be designed and manufactured upon customer's request.

SSS -> SuperSharpSilicon Tip
AR5 -> High Aspect Ratio Tip (5:1)
AR10 -> Heigh Aspect Ratio (10:1)
AR5T -> Tilt Compensated High Aspect Ratio Tip (5:1)
DT -> Diamond Coated Tip
CDT -> Conductive Diamond Coated Tip
PtIr5 -> Platinum Iridium 5 Coating
Reflex -> Aluminum Coating


General

  • SPM probe for very high resolution imaging
  • Fits to all well-known commercial SPMs
  • Mnolithic design of holder, cantilever and tip
  • Tip is pointing into the <100> direction
  • Cantilever and tip are supported by a single crystal silicon holder

Material Features

  • Highly doped, single crystal silicon
  • High conductivity of the doped silicon avoids electrostatic charging
  • Resistively is as low as 0.01-0.025 Ohm*cm.
  • No intrinsic stress and absolutely straight cantilevers
  • No bending of cantilever by changing temperatures
  • Chemically inert silicon for application in fluids or electrochemical cells

Cantilever

  • Trapezoidal cross section of the cantilever
  • Rather wide detector side for easy adjustment
  • Small width at the tip side reduces the damages

 Holder

  • Cantilever is fixed to a silicon holder
  • Dimensions of the holder are very reproducible
  • Replacement of probe without major readjustment
  • Etched corners of the holder avoid contact between the holder and the sample

Tip

  • Tip is shaped like a polygon based pyramid and is located at the very end of the cantilever
  • Macroscopic half-cone angles
    - are 20� to 25� seen along the cantilever axis
    - are 25� to 30� seen from the side
    - taper to virtually zero at the very end of the tip
  • Tip radii are typically better than 10 nm
  • Tip height is 10-15 �m

For more information contact www.nanworld.com

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