Posted in | Nanofabrication

EpiLEDs Order Two MOCVD Reactors from AIXTRON

Published on May 25, 2007 at 2:00 AM

AIXTRON AG received an order for two MOCVD reactors from EpiLEDs Technologies Inc., a leading developer and manufacturer of high brightness LEDs within the first quarter 2007.

EpiLEDs Technologies Inc., has selected two Thomas Swan Close Coupled Showerhead CRIUS 30x2-inch wafer configuration systems. They will be used for the volume production of high brightness gallium nitride (GaN) based LEDs. These reactors will be installed alongside the company’s GaN-based LED manufacturing systems, a pair of AIXTRON AIX 2600G3 HT reactors, in its state-of-the-art facility in Tainan, Taiwan.

Mr. Steve Ku, President of EpiLEDs Technologies Inc., comments: “We are fully satisfied with the development and production performance from our AIXTRON AIX 2600G3 MOCVD tools. It is our strategic plan to secure a strong share of the solid-state lighting market. With these new Thomas Swan MOCVD tools we will have the means to achieve this promptly and efficiently. We have complete confidence in the Thomas Swan Close Coupled Showerhead system. It is a production proven system with an excellent reputation. AIXTRON provides us with speedy qualification and comprehensive support so installation and ramp-up will be on schedule to meeting market’s needs."

Created specifically to compete in the blue LED market, EpiLEDs Technologies Inc., is a new start-up company with very ambitious plans backed by highly experienced personnel. With leading Taiwanese DRAM maker ProMOS Technologies and chip processing equipment maker Hermes-Epitek as main investors it is justifiably confident that its LED products will meet the price and performance demanded of the billion-dollar next-generation lighting applications market.

Amongst the latest offerings in the AIXTRON range of MOCVD tools, the Thomas Swan CRIUS 30x2-inch is one of the highest capacity models available in the marketplace. Robust and extremely versatile, the customer can choose the optimum configuration by wafer size, in this case 30x2-inch sapphire or silicon carbide substrates per run.

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