LayTec
is happy to announce the sale of an EpiCurve®TT system to the Technical
University of Braunschweig, Germany. The tool will be used by the group of Prof.
A. Hangleiter for R+D of GaN based long wavelength emitters, mainly green lasers
and LEDs.
a model of the wafer bow process due to growing In content: composition induced lattice mismatch causes wafer bow and temperature deviations
Dr. Uwe Rossow will use EpiCurve® TT for monitoring and
understanding the strain effects and the relaxation process
of the underlying cladding and waveguide layers as well as of
the layers in the active region of the emitting structures. His
team uses Indium-Gallium-Nitride as quantum wells.
EpiCurve® TT measures in-situ wafer bowing, temperature
and reflectance, which helps to control the stress, film composition,
surface roughness and wafer temperature.
Figure shows roughly what happens when strained InGaN is grown on a GaN buffer:
a layer of InGaN, which has a lattice constant larger than the underlying layer,
forces the whole stack to bow. The wafer becomes convex, which causes temperature
deviations in the middle and on the edges of the structure.
“Simultaneous curvature and temperature measurements
by EpiCurve®TT already during the process will help us to
control the relaxation process, to achieve better uniformity,
to reproduce growth conditions and improve the structure
quality,” said Dr. Uwe Rossow. LayTec is looking forward to a
successful collaboration with the University of Braunschweig!