along with its subsidiary Brion Technologies, today announced a broad-scoped
joint development project with STMicroelectronics (ST) to accelerate 28-nm node
deployment and 22-nm node development.
This joint development project, code-named SOLID (Silicon printing Optimization
with Lithography control and Integrated Design), seeks to optimize the patterning
process from design to manufacturing, extend characterization tools and methods
to develop new correction/compensation techniques for reducing variability and
explore breakthrough lithography solutions for manufacturing complex chips at
ST will work with Tachyon™ SMO source-mask co-optimization in tandem
with ASML’s advanced illumination sources, including the recently announced
FlexRay™ programmable illuminator. Together Tachyon SMO and FlexRay will
provide ST faster development cycles in R&D and faster ramp to production.
Till now, ST has successfully used Brion’s Tachyon OPC+ optical proximity
correction and LMC lithography manufacturability check in its 45-nm production.
“This joint development project combined with ASML’s integrated
suite of lithography products, including Brion computational solutions and the
latest generation of TWINSCAN NXT scanner provides ST with computational and
wafer lithography technologies that will enable us to develop optimum manufacturing
solutions at 28-nm and below,” said Joël Hartmann, Silicon Technology
Development Director for STMicroelectronics, at Crolles, France. “Furthermore
this ST-ASML effort is a reinforcement of the Crolles cooperative R&D cluster,
which gathers partners around the development and enabling of low-power SoC
(System on Chip) and value-added application-specific technologies. This is
a perfect example of a project developed within the framework of the Nano2012
“As a long-time customer of ASML, ST is an excellent partner with whom
to explore and develop holistic lithography methods for creating advanced semiconductors,”
said Bert Koek, senior vice president, applications product group at ASML.