AIXTRON AG announced
today a new order for one AIX 200, 1x2 inch configuration deposition system
from the Pontificial Catholic University of Rio de Janeiro (PUC-Rio), Brazil.
The new system will be delivered and installed at the Semiconductor Laboratory
(LabSem) of the University.
Materials to be grown on the new MOVPE reactor are InP and GaAs based quantum
well and quantum dot structures. Applications cover site control of quantum
dot nucleation, photonic crystals, lasers, photodetectors, solar cells, fundamental
properties of quantum dots, superlattices and microcavities.
Coordinator and leader of the technology-research mission, Prof. Patrícia
Lustoza de Souza of the Pontificial Catholic University of Rio de Janeiro comments,
“Recent funding means we can update our facilities and top of the list
is a new MOVPE reactor. It was logical that we pick an AIX 200, partly because
we already have one but mostly because of its versatility. This will enable
us to grow semiconductor samples not only for our members but also for any other
group within the country and abroad wishing to collaborate or source from us.
We appreciate our system’s reliability as well as the fact that it is
inherently capable of producing the best layers. This existing AIX 200 has been
running for almost two decades proving the quality of the equipment. Over the
years we have also developed a close working relationship with AIXTRON personnel.
We have always been fully satisfied with the competence of the team during their
visits to Rio de Janeiro and their availability over the phone to discuss our
technical issues.”
The Brazilian Government recently created the National Science and Technology
Institute for Semiconductor Nanodevices (INCT-DISSE). This involves several
Brazilian research groups and its headquarters at the Semiconductor Laboratory
(LabSem). DISSE membership includes over twenty top level researchers in the
field from eight institutions with long experience in specific areas. It carries
out applied and basic research in III-V electronic and optoelectronic devices.