Samsung Electronics, a provider of advanced memory technology, has developed 32 GB double data rate-3 (DDR3) registered dual inline memory modules (RDIMMs) that utilize three-dimensional through silicon via (TSV) package technology.
Samsung’s advanced 30 nm class-based technology influences power and performance characteristics of the module to provide a significantly greener memory system than previous 40 nm class-based modules. Initial samples are under evaluation.
The latest 32 GB RDIMM with three-dimensional TSV package technology employs Samsung's 30 nm class 4 Gb DDR3. Its operational speed is up to 1,333 Mbps which is a 70 % improvement when compared to the former quad-rank 32 GB RDIMMs that transmit at speeds of 800 Mbps.
In addition, the 32 GB module consumes a minimal power of about 4.5 W/h when compared to other memory modules that are being used in enterprise servers. This new module saves nearly 30 % energy in comparison with the 32 GB load-reduced, dual-inline memory module (LRDIMM) based on 30 nm class, which helps in developing memory solutions with 32 GB or above. These savings pave way for acceptance of TSV technology which allows a multi-stacked chip to perform at levels equivalent to a single silicon chip by considerably reducing signal lines, in turn decreasing the amount of power consumed and enabling the attainment of higher operational speed and density.
In addition to present server solution customers, the company has collaborated with controller and CPU designers to enhance rapid adoption of three-dimensional TSV server solution modules, and provide opportunity for higher-density memory and 32 GB modules using 20 nm class DDR3 for application in higher-capacity servers.
Source: http://www.samsung.com/