By Cameron Chai
At the eighth annual Samsung Mobile Solutions Forum conducted at Westin Taipei, Samsung Electronics has proclaimed that it has developed a first-of-a-kind monolithic 4 Gb low power double-data-rate 3 (LPDDR3) memory utilizing 30 nm-class process technology to support three-dimensional graphics, ultra resolution displays and quicker processers in the advanced future-generation mobile devices.
The novel 4Gb LPDDR3 DRAM has a data transfer rate of up to 1,600 Mbps, which is 1.5 folds quicker when compared to the data transfer rate of 1,066 Mbps of the existing LPDDR2. The consumption of electrical power by the new component is 20% lesser than its precursor. Moreover, Samsung will allow the utilization of a single 1GB LPDDR3 package that has a data transfer rate of a maximum of 12.8 GBps through the stacking of two 4 Gb chips.
In order to fulfill the growing demand for high-density mobile memory solutions for the processing of huge data, the optimal data transfer rate of mobile DRAM for advanced mobile equipment will augment from 1GB (8Gb) to a maximum of 2GB (16Gb) by early 2012. These densities will be offered by stacking four numbers of 4Gb LPDDR3 chips.
Samsung will supply the samples of the 4Gb-based LPDDR3 chip to major mobile device manufacturers from next quarter. The chips are anticipated to gain wide acceptance in 2012 in sophisticated mobile devices such as future-generation tablet PCs and smartphones.