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Cree Announces Availability of 150-mm 4H n-Type Silicon Carbide Epitaxial Wafers

Published on September 1, 2012 at 6:08 AM

By Will Soutter

Cree, a provider of light-emitting diode (LED) lighting, lighting-class LEDs, and semiconductor products for RF and power applications, has introduced superior-quality, low micropipe 150-mm 4H n-type silicon carbide epitaxial wafers.

Cree continues to dominate the silicon carbide materials marketplace, transitioning to larger diameters. This latest advancement from the company reduces device costs and allows customers to adopt with current 150-mm diameter device processing lines. The company has announced the availability of 150-mm epitaxial wafers, which have even epitaxial layers with a thickness of up to 100 µm, for immediate procurement in limited quantities.

Silicon carbide is a semiconductor material that demonstrates superior performance and is utilized in the making of a variety of communication, power and lighting components such as power switching devices, LEDs, and RF power transistors for use in wireless communications. The 150-mm diameter single crystal silicon carbide substrates improves throughput and reduces costs, while reinforcing the constant expansion of the silicon carbide industry.

Dr. Vijay Balakrishna, Materials Product Manager at Cree, stated that the company’s capability to provide 100-mm epitaxial wafers in high volumes is unmatched in the silicon carbide industry. The company’s latest 150-mm technology constantly pushes the standards for silicon carbide wafers. Its vertically integrated approach provides a comprehensive solution for superior quality 150-mm silicon carbide epitaxial wafers to customers, offering the required stable supply to key players operating in the power electronics market.

Source: http://www.cree.com

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