World Scientific has published its latest electronics frontiers book on advanced modeling of nanoscale electron devices.
Entitled "Frontiers in Electronics: Advanced Modeling of Nanoscale Electron Devices", the book is edited by Benjamin Iñiguez (Universitat Rovira I Virgili, Spain), Tor A Fjeldly (Norwegian University of Science and Technology (NTNU), Norway).
The contents address the Monte-Carlo simulation of Ultra-Thin Film Silicon-on-Insulator MOSFETs, analytical models and electrical characterisation of advanced MOSFETs in the Quasi-Ballistic Regime, physics based analytical modeling of nanoscale multigate MOSFETs, and compact modeling of double and tri-gate MOSFETs.
The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.