Advanced
Diamond Technologies, Inc. (ADT), the world leader in
developing and applying diamond films for industrial, electronic, and
mechanical applications unveils new varieties in its product line of
diamond coated wafers for accelerating the development of MEMS and
electronic devices at SEMICON West 2007, July 17-19, 2007, in San
Francisco, CA.
ADT's new products include Diamond on Insulator (DOI(TM))
wafers, an extension of its Diamond on Silicon (DoSi(TM)) wafers made
from the vapor deposition of ADT's phase-pure ultrananocrystalline
diamond (UNCD(R)) on silicon wafers. The DoSi wafer products received
Frost and Sullivan's 2006 Product Innovation of the Year award for
diamond films.
UNCD DOI wafers serve as platforms to test device concepts and
develop processes to enable wafer-scale diamond applications across a
broad spectrum of products including MEMS and electronics. ADT's
advancement, at last, makes diamond an engineering material suitable
for volume production of many types of devices.
"We believe that a reliable supply of our commercial grade
diamond coated wafers will stimulate the development of diamond MEMS
and electronic devices. Today's product launch brings diamond MEMS
devices one step closer to volume production-making diamond as an
engineering material a reality," said ADT president Neil Kane.
ADT is also pleased to announce the award of a Phase I Small
Business Innovation Research (SBIR) grant from the National Science
Foundation (NSF) for the development of "Starter Wafers for Diamond
MEMS Fabrication."
"This project allows us to further expand the UNCD DOI product
line by demonstrating the integration of other common MEMS materials
such as metals, nitrides, and complex oxides with UNCD. We will show
that diamond wafers with outstanding uniformity can be manufactured in
sizes up to 200 mm and meet MEMS foundry standards for cleanliness and
reproducibility," said ADT chief technical officer Dr. John Carlisle.