The introduction of the UVISEL VUV phase modulated
spectroscopic ellipsometer from Horiba Jobin Yvon extends the
performance capabilities of the UVISEL series down to 140 nm. This
energy range is becoming increasingly important for the
characterisation of extremely thin films used in nanoscale devices with
nanoelectronic, nanophotonic, nanobiosensor and nanorobotic
The UVISEL VUV ellipsometer provides the best combination of
superior VUV performance and experimental flexibility to determine thin
film thickness and optical constants across the wavelength range 140 to
826 nm. Features of the UVISEL VUV include:
- Wide spectral range at very high
- Advanced design for high performance in the VUV
- Direct sample access and fast loading
- Phase modulation technology for high accuracy and precision
- Excellent signal to noise and signal to background ratio
To be able to cover this wide range the instrument must be air
/ oxygen free, and it is this requirements that can reduce sample
throughput for some instruments owing to ingress of air and its removal
when the sample is mounted and dismounted from the instruments.
To minimize this affect the UVISEL VUV is configured as three
separate compartments; the lamp + polarizer, the sample chamber, and
the photoelastic modulator + monochromator + photomultiplier detection
system. The sample compartment has separate access and is equipped with
its own isolated purge system.
This design provides high flexibility and versatility for
sample handling, and enables high sample throughput.
The UVISEL VUV is controlled by the Deltapsi2 software
platform, and is ideal for VUV thin film applications for demanding
research and industrial quality control.
VUV Thin Film
VUV spectroscopic ellipsometry applications range from the
measurements of the optical constants and optical bandgap of materials
absorbing far in the UV such as high k materials, organic materials,
stepper optics, photoresists.
VUV spectroscopic ellipsometry provides increased precision
for thickness measurement of very thin layers and interfaces. This is
especially useful for nanoscale applications where the characterization
of a native oxide, a rough over layer or an interface affects the
efficiency of the final device.