Lowest noise, highest resolution Atomic Force Microscope in its class
The Innova atomic force microscope from Bruker provides more performance and flexibility at a greater value than any other SPM. The proprietary closed-loop scan delivers noise-levels that approach those of high-end, open-loop systems and offers a wide range of functionality for physical, materials, and life sciences, from sub-micron levels up to 90 microns.
The Integrated AFM-Raman Imaging System (IRIS) Module for Bruker Atomic Force Microscopes enables the seamless blend of AFM and Raman spectroscopy by combining chemical or crystallographic information (Raman spectroscopy) at high spatial and spectral resolution, with the most advanced nanoscale mechanical, electrical, and thermal AFM characterization. The IRIS Module supports both the Innova and BioScope™ Catalyst™ AFM Systems, providing combined-technique experiment control for advanced research in both materials and life sciences applications. To create an AFM-Raman spectroscopy system, simply select your AFM platform and add a HORIBA Scientific, Renishaw, or Princeton Instruments Raman microscope. For life sciences applications, you can also add an inverted light microscope from Zeiss, Leica, Olympus or Nikon.
However you tailor your system, your application will benefit from the best tip preservation and lowest drift, guaranteeing that alignment is preserved even over the optical integration times necessary to interrogate weak Raman scatterers.
Features of the bruker Innova SPM include:
- Exclusive Whisper™ piezo scan technology delivers AFM performance and resolution second only to the Bruker MultiMode
- Highest resolution optics deliver better data and accurate probe positioning
- Fast tip exchange and superior sample access offer convenience and exceptional ease of use
- Full range of SPM modes provides powerful research flexibility
- Advanced signal access and routing capabilities for custom research
- Now with Dark Lift™, which leverages Bruker's patented LiftMode capability, enabling you to distinguish between intrinsic electrical sample properties and photoelectric effects