Researchers at imec and
at the Center for Advanced Materials Processing (CAMP) of the Clarkson University
in Potsdam, New York (U.S.) have recently started a collaboration to study the
fundamentals of CMP processes for novel materials such as Ge or III/V compounds.
This study aims to further optimize the CMP processes that are used in the integration
of these new materials in IC processing. A first finding on Ge-on-Si wafers
is that the oxide removal rate and the Ge roughness are inversely proportional.
To further scale IC devices, new materials are called for. Examples are the
Ge or III/V compounds that are used as high-mobility channel material. Strained
Ge is a very good candidate channel material for pMOS devices, because of its
significantly higher mobility. And III/V materials are good candidates for use
in nMOS devices. Such strained Ge and III/V compounds can be used, combined
with a high-k dielectric as gate oxide, even if they don’t have a stable
The new materials are integrated on bulk Si wafers after completion of the
standard shallow trench isolation (STI). The active Si is removed creating trenches.
In these trenches, the high-mobility materials are selectively grown through
epitaxial processes. To make sure that there is good edge coverage, the trenches
are filled until the high-mobility materials overflow the edges. The resulting
surface is rough; CMP processes are needed to remove the overfill and to smoothen
While the integration of these materials on bulk Si wafers is already ongoing
and first CMP processes were developed, there is still a need to better understand
the mechanisms for these CMP processes and to further optimize them. Ideally
the removal rates would be tunable for Ge and SiO2, on which the CMP process
needs to stop. It is critical that the polished Ge surface after CMP is defect
free and has a very low roughness (<0.5nm root mean square (RMS)).
Starting with studies for the CMP of Ge and SiGe films, the collaboration between
imec and CAMP aims to improve the understanding of the polishing mechanisms
for these materials. The common understanding of the mechanism for Ge CMP is
the oxidation of Ge by a strong oxidizer followed by abrasion of the oxidized
Ge layer by abrasives present in the slurry. Experiments with Ge disks and with
Ge-on-Si wafers from imec were done at CAMP to study the influence of different
oxidizers at various pH values. A first finding is that the oxide removal rate
and the Ge roughness are inversely proportional. Further tests will be done
to explore this correlation.