Site Sponsors
  • Park Systems - Manufacturer of a complete range of AFM solutions
  • Strem Chemicals - Nanomaterials for R&D
  • Oxford Instruments Nanoanalysis - X-Max Large Area Analytical EDS SDD

New AdvantEdge Mesa System Delivers Sub-Nanometer CD Uniformity

Published on July 13, 2010 at 3:56 AM

Applied Materials, Inc. today unveiled its new Applied Centura® AdvantEdge™ Mesa™ system for creating nano-scale circuit features with angstrom-level precision in next-generation DRAM, Flash and Logic devices.

As a result of this critical breakthrough in silicon etch technology, Applied has experienced very rapid demand for the AdvantEdge Mesa system. More than 60 chambers have shipped to customers in the last three months – where they are tool-of-record for 32nm chip production and 22nm development.

Applied Materials has experienced high demand for its new Applied Centura AdvantEdge Mesa etch system due to its revolutionary source design that delivers angstrom-level precision to the edge of the wafer.

“Our customers’ enthusiastic adoption of the AdvantEdge Mesa system illustrates the industry’s strong unmet need for etch technology capable of fabricating high-density memory devices and energy-efficient microprocessors,” said Ellie Yieh, corporate vice president and general manager of Applied’s Etch business division. “By freeing chipmakers from the need to compensate for systematic non-uniformity limitations, the Mesa system can be a critical tool for helping customers shrink circuit features, control leakage current and achieve the high production yields necessary to build the smart mobile devices of the future.”

Key to the AdvantEdge Mesa system is its new inductively-coupled plasma (ICP) source design, which eliminates the characteristic “etch signature” that has limited the performance of all previous ICP-based systems. The Mesa’s ICP source provides a truly flat, uniform profile, enabling precise transfer of lithography patterns out to the extreme edge of the wafer to significantly increase die yield. Targeted for critical shallow trench isolation, buried bit and word lines, and double patterning silicon etch applications, the AdvantEdge Mesa system’s best-in-class performance delivers 1% etch depth non-uniformity, sub-nanometer CD uniformity, and the highest available wafer throughput.

Applied’s large installed base of existing AdvantEdge systems can be upgraded with Mesa technology, offering device makers a smooth upgrade path for multiple device generations using a proven platform.

The AdvantEdge Mesa system is one of several important technologies being announced by Applied during SEMICON West 2010 in San Francisco.

Source: http://www.appliedmaterials.com/

Tell Us What You Think

Do you have a review, update or anything you would like to add to this news story?

Leave your feedback
Submit