Eulitha continues to add higher resolution structures to its line of standard products. The newest such item is a 50 nm-pitch grating etched into silicon. These gratings are made with Eulitha’s unique EUV interference lithography technology which means extremely smooth structures and none of the stitching or pixel related imperfections that are found in patterns of similar resolution produced using e-beam lithography.
The replication of these high resolution gratings were demonstrated by the Nanoimprint group at the Paul Scherrer Institute. Gratings with an etch depth of 40nm and a linewidth of 12nm (pitch 50nm) were imprinted in a modified imprint resist (mr-I 7030R) with intrinsic release properties provided by microresist technology GmbH. Well defined trenches were imaged after the thermal imprint process. The residual resist layer was subsequently removed and the replicated structures were etched into the Si substrate (image not shown). The full results will be presented at the NNT conference 20101.
The 25nm half-pitch gratings are available as a standard product or in custom configurations.
1C. Dais, H. H. Solak, M. Altana, C. Spreu, H. Atasoy, J. Gobrecht, H. Schift, Thermal NIL of Large Area 12 nm EUV Interference Lithography Gratings into Resist with Improved Release Properties and Pattern Transfer, Eulitha AG, INKA Institute, Paul Scherrer Institut, micro resist technology GmbH.