Eulitha continues to
add higher resolution structures to its line of standard products. The newest
such item is a 50 nm-pitch grating etched into silicon. These gratings are made
with Eulitha’s unique EUV interference lithography technology which means
extremely smooth structures and none of the stitching or pixel related imperfections
that are found in patterns of similar resolution produced using e-beam lithography.
The replication of these high resolution gratings were demonstrated by the
Nanoimprint group at the Paul Scherrer Institute. Gratings with an etch depth
of 40nm and a linewidth of 12nm (pitch 50nm) were imprinted in a modified imprint
resist (mr-I 7030R) with intrinsic release properties provided by microresist
technology GmbH. Well defined trenches were imaged after the thermal imprint
process. The residual resist layer was subsequently removed and the replicated
structures were etched into the Si substrate (image not shown). The full results
will be presented at the NNT conference 20101.
The 25nm half-pitch gratings are available as a standard product or in custom
here for more information including current prices.
1C. Dais, H. H. Solak, M. Altana, C. Spreu, H. Atasoy, J. Gobrecht,
H. Schift, Thermal NIL of Large Area 12 nm EUV Interference Lithography Gratings
into Resist with Improved Release Properties and Pattern Transfer, Eulitha AG,
INKA Institute, Paul Scherrer Institut, micro resist technology GmbH.