Renesas Electronics, a company specializing in advanced flash design and semiconductor solutions, has declared that it has designed the first-of-its-kind 40 nm memory intellectual property (IP) for real-time applications in the automotive industry.
By implementing this 40 nm flash memory technology, Renesas Electronics will also become the first company to introduce 40 nm embedded flash microcontrollers (MCUs) for real-time automotive applications. The company will ship the samples by early autumn 2012.
Renesas Electronics has years of expertise in designing flash metal oxide nitride oxide silicon (MONOS) technology with superior quality and consistency. It was the first company to introduce 90 nm flash MCU products for automotive applications in 2007.
Renesas Electronics’ flash MONOS technology delivers high performance and high consistency, while allowing scalability at the same time. The assessment results of 40nm flash test devices have demonstrated the successful achievement of outstanding features for three important parameters, programming time, program/erase cycle endurance and data retention. The 40 nm process node allows the merging of communication and various functional safety-related interfaces.
The 40nm flash memory IP of Renesas Electronics assures data retention for a 20-year period and allows reading from a junction temperature of up to 170° C. The data flash attains data retention for a long 20-year period even after 125,000 times of program/erase cycles. Moreover, the code flash backs 120 MHz of read speed.
Source: http://sg.renesas.com