Posted in | Nanofabrication

Non-Contact Measurement of Temperature Changes of Silicon Wafer During Heat Treatment

Yoshiro Yamada and Juntaro Ishii of the Radiation Thermometry Section, Temperature and Humidity Division, the Metrology Institute of Japan of the National Institute of Advanced Industrial Science and Technology (AIST), have developed a surface temperature monitoring system for the high-speed optical-annealing of silicon wafers (flash lamp annealing), in collaboration with Semiconductor Leading Edge Technologies, Inc., Dainippon Screen Mfg. Co., Ltd., and CHINO Corporation.

The developed system enables contactless, precise, and rapid measurement of changes in the wafer surface temperature, which reaches around 1000 °C. The system eliminates the influence of strong light emission from xenon lamps for heating, as well as that of the behavior of the emissivity of the wafer surface. When installed on a flash lamp annealing apparatus, this surface temperature monitoring system can be used for in situ measurement of the temperature of the wafer surface; the temperature increases and decreases rapidly within a period as short as 0.001 s. This technology will contribute to the sophistication of silicon device miniaturization and is expected to be adopted for temperature monitoring in various high-temperature processes in industry.

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