Posted in | Nanomaterials | Nanoenergy

Samsung’s 30nm - class DDR3 DRAM Modules Consume Less Energy

Samsung Electronics America, a company that manufactures digital consumer electronics, released 30 nm-class DDR3 synchronous dynamic random - access memory (DRAM) modules, which are rapid and energy efficient and used in PCs.

According to Senior VP of Samsung’s mobile entertainment marketing division, Reid Sullivan, 30nm-class DRAM modules combines the advantages of superior low-power DDR3 technology with high speeds of 1,600 Mbps.

These DDR3 DRAM modules are offered in both 2 and 4 GB capacities. Desktop PCs use very low profile (VLP) unbuffered dual in-line memory module (UDIMM) options and notebook PCs use small outline DIMM (SODIMM) options. The modules are backwards compatible with systems developed for existing DDR3 and DDR2 memory.

The 30nm-class process technology delivers high memory capacity and is associated with low power consumption. The DDR3 DRAM modules from Samsung consume two-thirds less power than those modules manufactured using standard 60nm-class technology. These energy-efficient memory modules do not compromise on performance. The new modules transfer data 20% quicker than the company’s existing 40nm-class DDR3 DRAM.


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