Article - 20 Nov 2003
Engineers at the University of California, Berkeley, have found an innovative way to grow silicon nanowires and carbon nanotubes directly on microstructures at room temperature. Posted June 23 2003
News - 15 Jul 2015
Nano-electronics research center imec announced today at SEMICON West that it has demonstrated concept and feasibilityfor pore-sealing low-k dielectrics in advanced interconnects. The method, based on...
Article - 27 Apr 2005
Various methods are used to synthesize silicon nanowires, including Chemical Vapor Deposition (CVD), Plasma Enhanced CVD (PECVD), Laser-Ablation and Evaporation. Scientists are also using Low Pressure...
News - 18 Feb 2015
PVA TePla America, Inc.(PTA), a subsidiary of PVA TePla AG announced today it has formed a global strategic alliance with Integrated Surface Technologies (IST) MENLO PARK, CA. The alliance will...
Article - 23 Nov 2010
By using the ICP-CVD technique, Oxford Instruments have developed a deposition process in which high quality films can be deposited with high density plasma, low deposition pressures and temperatures.
News - 7 May 2010
Novellus Systems (NASDAQ: NVLS) announced today that it has developed an innovative DirectFill CVD tungsten nitride (WN) liner-barrier film that replaces the conventional physical vapor...
News - 11 Dec 2012
The electronic properties of graphene films are directly affected by the characteristics of the substrates on which they are grown or to which they are transferred. Researchers are taking advantage of...
News - 3 Nov 2009
Novellus Systems (NASDAQ: NVLS) announced today that it has developed a new tungsten deposition process, called LRWxT, that can effectively reduce contact and line resistance at the 3Xnm technology...
News - 23 Jan 2014
"Cool it!" That's a prime directive for microprocessor chips and a promising new solution to meeting this imperative is in the offing. Researchers with the U.S. Department of Energy...
Article - 4 May 2013
Metal alkyl amides are important as single source CVD precursors for nitride thin films. Basic reagents such as oxygen, water, ozone can react with metal alkyl amides to produce oxide films.