Cadence Design Systems, Inc. and Applied Materials, Inc. today announced the companies are collaborating on a development program to optimize the chemical-mechanical planarization (CMP) process through silicon characterization and modeling for advanced-node designs at 14 nanometer (nm) and below.
Researchers at Binghamton University are focusing on printed electronics: using inkjet technology to print electronic nanomaterials onto flexible substrates. When compared to traditional methods used in microelectronics fabrication, the new technology conserves material and is more environmentally friendly.
Researchers at Penn State, UT-Dallas, Institute of Atomic and Molecular Sciences, and King Abdullah University of Science and Technology, have found that a novel quantum mechanical transport phenomenon demonstrated at room temperature in an atomically thin layered material could help develop new nanoelectronic devices and circuits.
United Microelectronics Corporation, a leading global semiconductor foundry, today announced it has collaborated with ARM to tape out a process qualification vehicle (PQV) test chip on UMC's 14nm FinFET technology to help validate an ARM Cortex-A family core on the advanced foundry process node. The 14nm cooperation expands on the two companies' successful effort to develop and offer ARM Artisan® Physical IP on UMC's volume production 28nm High-K/Metal Gate process.
Synopsys, Inc. and United Microelectronics Corporation today announced an expanded collaboration to include Synopsys DesignWare® Embedded Memory IP and the DesignWare STAR Memory System® test and repair solution on UMC's second 14-nanometer (nm) FinFET process qualification vehicle (PQV).
Oxford Instruments Plasma Technology announce webinar on process solutions for GaN and SiC power semiconductor devices, 8th July 2015.
North Carolina State University researchers have developed flexible, transparent conductors with “nano-accordion” design. The conductors hold promise in different applications including wearable sensors, stretchable displays or flexible electronics.
Phase change random access memory (PRAM) is one of the strongest candidates for next-generation nonvolatile memory for flexible and wearable electronics. In order to be used as a core memory for flexible devices, the most important issue is reducing high operating current. The effective solution is to decrease cell size in sub-micron region as in commercialized conventional PRAM. However, the scaling to nano-dimension on flexible substrates is extremely difficult due to soft nature and photolithographic limits on plastics, thus practical flexible PRAM has not been realized yet.
Origami, the centuries-old Japanese paper-folding art, has inspired recent designs for flexible energy-storage technology. But energy-storage device architecture based on origami patterns has so far been able to yield batteries that can change only from simple folded to unfolded positions. They can flex, but not actually stretch.
At this year’s on VLSI Technology and Circuits (June 15-19, 2015), nano-electronics research center imec will present a record number of 11 papers. Imec’s prominent presence at this renowned scientific meeting confirms its leading role in R&D on tackling the challenges to scale logic and memory architectures, and on advanced circuit design solutions.
Terms
While we only use edited and approved content for Azthena
answers, it may on occasions provide incorrect responses.
Please confirm any data provided with the related suppliers or
authors. We do not provide medical advice, if you search for
medical information you must always consult a medical
professional before acting on any information provided.
Your questions, but not your email details will be shared with
OpenAI and retained for 30 days in accordance with their
privacy principles.
Please do not ask questions that use sensitive or confidential
information.
Read the full Terms & Conditions.