University of Illinois researchers have built the world’s fastest transistor and broken their own record in the process.
The device was fabricated in the university's Micro and Nanotechnology Laboratory and has a frequency of 509 gigahertz - is 57 gigahertz faster than the previous record holder. Traditional transistors are made from silicon and germanium but the team used indium phosphide and indium gallium arsenide for their record breaker. This system is faster than silicon germanium and supports a much higher current density. This means the components can be made smaller and the transistor can charge and discharge more quickly, which creates a significant speed improvement.
The device is expected to have strong applications in high-speed communications products, consumer electronics and electronic combat systems.