Dr George Wang

Principal Member of Technical Staff

Sandia National Laboratories

PH: +1 (505) 284-9212
Fax: +1 (505) 844-3211
Email: [email protected]
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Background

George Wang is a Principal Member of the Technical Staff in the Advanced Materials Sciences Department at Sandia National Laboratories. Dr. Wang received his B.S. degree in Chemical Engineering, with Highest Honors, from the University of Texas at Austin in 1997, and M.S. and Ph.D. degrees in Chemical Engineering from Stanford University in 1999 and 2002, respectively, where he was awarded a National Science Foundation Graduate Fellowship and the David Sen-Lin Lee Fellowship. His thesis work at Stanford focused on the functionalization of semiconductor surfaces using novel organic reactions under ultra-high vacuum.

At Sandia, Dr. Wang's primary research efforts has focused on the synthesis, characterization, and applications of III-nitride nanowires grown by metal-organic chemical vapor deposition (MOCVD). In addition, he has led efforts at Sandia in the 3D growth of high quality GaN using novel nanostructuring and selective growth techniques. Dr. Wang has also investigated parasitic chemistry and Mg doping issues in AlGaInN MOCVD using a combination of in-situ experimental techniques and density functional theory calculations. Currently, Dr. Wang is a Thrust Leader investigating energy conversion processes in low-dimensional structures in the recently awarded 5-year, $18M Solid State Lighting Science Energy Frontier Research Center at Sandia, funded by DOE Basic Energy Sciences.

Recently, Dr. Wang has been responsible for the design, purchase, and start-up of a custom, state-of-the-art $3.5M nanofabrication and characterization system, the Advanced Nanotechnology Tool (ANT). This world-class system, which came online in 2007 at Sandia's new MESA facility, significantly bolsters Sandia's nanoresearch capabilities.

Since 1999, Dr. Wang has authored or co-authored 34 journal publications, which have received over 600 citations, and 2 patents. His work has also received attention in Compound Semiconductor magazine, New Scientist magazine, The Guardian newspaper, Chemical and Engineering News magazine, and has been featured on the covers of Advanced Materials, Nanotechnology, and The Journal of Physical Chemistry B.