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Researchers Build New Nano-Machines with DNA Origami

If the new nano-machines built at The Ohio State University look familiar, it’s because they were designed with full-size mechanical parts such as hinges and pistons in mind.

6 Jan 2015

Shanghai Huali Microelectronics Corporation Presents Outlook for IoT Market at ICCAD 2014

Chinese IC manufacturer Shanghai Huali Microelectronics Corporation gave a presentation on its outlook for the Internet of Things (IoT) market and the wide application of its specialty technology at the 2014 China Semiconductor Industry Association IC Design Branch Annual Conference, which was recently held at Hong Kong Science Park.

2 Jan 2015

Bristol Awarded £450,000 to Develop GaN Nano-Engineered Semiconductors

The Universities of Bath, Bristol, Sheffield and Strathclyde and their industrial partners have been given funding to develop the UK into a future hub for the manufacture of advanced semiconductor materials.

23 Dec 2014

Samsung Commences Mass Production of 20nm 8Gb LPDDR4 Mobile DRAM

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has started mass producing the industry’s first 8 gigabit (Gb), low power double data rate 4 (LPDDR4) mobile DRAM based on the company’s leading-edge 20-nanometer (nm) process technology. LPDDR memories are the most widely used “working memory” for mobile devices worldwide.

From Samsung Electronics 23 Dec 2014

Piezoelectricity Demonstrated in Free Standing Single Layer of Molybdenum Disulfide

A door has been opened to low-power off/on switches in micro-electro-mechanical systems (MEMS) and nanoelectronic devices, as well as ultrasensitive bio-sensors, with the first observation of piezoelectricity in a free standing two-dimensional semiconductor by a team of researchers with the U.S. Department of Energy (DOE)'s Lawrence Berkeley National Laboratory (Berkeley Lab).

23 Dec 2014

Atomically Thin Material Developed at Rice University Holds Potential for Two-Dimensional Electronics

An atomically thin material developed at Rice University may lead to the thinnest-ever imaging platform.

22 Dec 2014

Xilinx Announces Volume Production of 20nm FPGAs

Xilinx, Inc. today announced that its Kintex® UltraScale™ KU040 FPGAs are now the industry's first 20nm device to move into volume production. Customers can benefit from an estimated one year time to market advantage relative to its competition.

22 Dec 2014

Renesas Electronics Develops New Circuit Technology for Automotive Information SoCs at 16nm

Renesas Electronics Corporation, a premier provider of advanced semiconductor solutions, today announced the development of a new circuit technology for automotive information SoCs (system on chips) at 16 nanometer (nm) and beyond.

19 Dec 2014

Quad-Core Silicon Built Around ARM Cortex-A17 Processor Implemented Using GLOBALFOUNDRIES’ 28nm-SLP Process Delivered

Cadence Design Systems, Inc., a leader in global electronic design innovation, and GLOBALFOUNDRIES, a leading provider of advanced semiconductor manufacturing technology, today announced the delivery of quad-core silicon built around the ARM® Cortex®-A17 processor implemented using GLOBALFOUNDRIES’ 28nm Super Low Power (28nm-SLP) process with High-k Metal Gate (HKMG) technology.

From Cadence Design Systems 19 Dec 2014

Synopsys Expands Collaboration with Nanoelectronics Research Center imec

Synopsys, Inc., a global leader providing software, IP and services used to accelerate innovation in chips and electronic systems, today announced the expansion of its collaboration with nanoelectronics research center imec to nanowire and other devices (FinFETs, Tunnel-FETs) targeting the 5-nanometer (nm) technology node and beyond.

18 Dec 2014

Nanoelectronics News

Researchers Build New Nano-Machines with DNA Origami

Shanghai Huali Microelectronics Corporation Presents Outlook for IoT Market at ICCAD 2014

Bristol Awarded £450,000 to Develop GaN Nano-Engineered Semiconductors

Samsung Commences Mass Production of 20nm 8Gb LPDDR4 Mobile DRAM

Piezoelectricity Demonstrated in Free Standing Single Layer of Molybdenum Disulfide

Atomically Thin Material Developed at Rice University Holds Potential for Two-Dimensional Electronics

Xilinx Announces Volume Production of 20nm FPGAs

Renesas Electronics Develops New Circuit Technology for Automotive Information SoCs at 16nm

Quad-Core Silicon Built Around ARM Cortex-A17 Processor Implemented Using GLOBALFOUNDRIES’ 28nm-SLP Process Delivered

Synopsys Expands Collaboration with Nanoelectronics Research Center imec

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