Posted in | Nanofabrication

SEMATECH to Demonstrate Extreme Ultraviolet Lithography at SPIE Advanced Lithography 2010

Critical issues and potential solutions in preparing extreme ultraviolet lithography (EUVL) for high-volume manufacturing will be explored by SEMATECH technologists at the SPIE Advanced Lithography 2010 conferences Feb. 21-25 in San Jose, CA.

The SEMATECH Lithography Program is based at the College of Nanoscale Science and Engineering’s (CNSE) Albany NanoTech Complex.

“SEMATECH has had an extraordinary year in lithography, and we plan to demonstrate our successes at SPIE,” said Bryan Rice, Lithography Director. “We’ll show how we are consistently leading the industry in enabling EUV mask and resist/materials infrastructure as well as EUVL manufacturing feasibility and affordability.”

A leading topic will be EUVL mask infrastructure, an area in which SEMATECH has proposed a new industry consortium. Advances in EUV resist development – including SEMATECH’s success with its 0.3 numerical aperture (NA) microexposure tools (MET) at CNSE and the University of California at Berkeley – also will be featured. Other SEMATECH papers will cover particle removal and inspection for EUV masks, and metrology techniques for optical defect inspection and double patterning.

SEMATECH and ISMI presentations at SPIE include, by subject, date and time:

EUVL Mask Infrastructure

Wednesday, Feb. 24

  • 8:40 a.m.: E-beam correction methodology for compensation of mask nonflatness in EUVL pilot line
  • 4:50 p.m.: An inspection and defect review strategy for EUV pilot line and high-volume manufacturing


Monday, Feb. 22

  • 2:50 p.m.: Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV-CAR extendibility study
  • 5:40 p.m. Thin EUV resist and underlayer stacks: correlating Tg, surface polarity, density, and image quality

Tuesday, Feb. 23

  • 8:40 a.m.: Development of an inorganic-based photoresist for DUV, EUV, and e-beam imaging

Thursday, Feb. 25

  • 10:30 a.m.: The SEMATECH Berkeley MET pushing EUV development beyond 22 nm half pitch

Particle Removal and Mask Inspection

Tuesday, Feb. 23

  • 2 p.m.: A study of defects on EUV mask using blank inspection, patterned mask inspection, and wafer inspection
  • 3:00 p.m.: Particle removal challenges of EUV patterned masks for the sub-22-nm HP node

Wednesday, Feb. 24

  • 6 p.m.: Particle protection capability of SEMI compliant EUV dual pod

Metrology, Inspection, and Process Control

Tuesday, Feb. 23

  • 8:40 a.m.: The limits and extensibility of optical patterned defect inspection
  • 11:10 a.m.: LER/LWR detection using dark-field spectroscopic methods
  • 6 p.m.: CD-SEM utility with double patterning (poster session)
  • 6 p.m.: Reconstruct FinFET cross section using CD-SAXS (poster session)

Thursday, Feb. 25

  • 8:30 a.m.: Electron-beam-induced photoresist shrinkage influence on 2D profiles
  • 2:10 p.m.: Reference material (RM) 8820: a versatile new NIST standard for nanometrology

Other Topics

Wednesday, Feb. 24

  • 6 p.m.: Modeling carbonization of extreme-ultraviolet optics
  • 6 p.m.: Characterization of contamination on the illumination optics of the SEMATECH extreme-ultraviolet micro-field exposure tool


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