Avantor Performance Materials have signed a joint development agreement (JDA) with SACHEM to deliver customized, next-generation selective etch chemical solutions to be suitable for semiconductor manufacturing.
The companies will collaborate to concentrate on unique removal chemistries and surface preparation for thin-film wafers. The JDA allows the companies to utilize SACHEM’s advanced surface preparations and high-volume etchants and Avantor’s expertise in residue removal and photoresist stripping.
Following the agreement, the first product to be released at SEMICON West 2011 is the J.T.Baker SLCT 128 sigma etchant specifically designed for FEOL poly gate structuring.
As per the agreement, the companies have formed an international applications team. The two companies are creating other targeted layer removal and selective etch solutions in collaboration with major semiconductor producers in the US and Asia.
Avantor develops semiconductor surface treatment technologies for solving complicated fabrication issues and provides cost-effective residue removal and photoresist stripping. The company produces and sells high-performance materials and chemistries worldwide.
SACHEM delivers high purity, accurate and new chemical solutions to clients in a wide range of markets such as biotechnology, agricultural chemicals, electronics, polymers, starch modification, pharmaceutical chemicals, and catalysts. Tom Mooney, President of SACHEM Asia, stated that the collaboration will enable them to offer customized selective etch chemistries to solve process challenges. The partnership would also help to increase the potential for evolving sub-22nm nodes.
Source: http://www.avantormaterials.com/