Aug 9 2007
Elemental Analysis Inc., a privately held trace element analysis firm, released today a study which defines expanded silicon purity testing levels with applications to photovoltaic cells. The rise of nanotechnology and solar energy demand, combined with tight polysilicon supplies, require increasing purity testing levels for production.
The study reveals that irradiation testing of polysilicon cells can insure detection of contaminants to levels as sensitive as one part per quadrillion. Samples do not undergo pre-test irradiation.
The study provides test parameter data to aid silicon producers in evaluating the extended test application for industry production. By catching contamination early, companies can potentially reduce waste and improve production outputs.
Testing can turn around in as little as three days, speeding the process up substantially from current market wait times as long as three months.
Semiconductor, solar cell producers and nanotechnology firms are pushing for the highest accuracy test levels to insure purity of their products as they hit the markets.
“We can provide trace element testing to parts per quadrillion using our Neutron Activation Analysis techniques.” states Mark Stauffer, of Elemental Analysis, “This “ultra trace detection” capability enables our customers to take their products to market with full confidence that the purity levels required for performance are there.”