Article - 27 Oct 2010
At Oxford Instruments Plasma Technology ave recently optimized the growth procedure to improve structural properties and surface morphology of thick AlN layers deposited via hydride vapor-phase...
News - 18 Jul 2008
Researchers at Purdue University have overcome a major obstacle in reducing the cost of "solid state lighting," a technology that could cut electricity consumption by 10 percent if widely...
Article - 20 Aug 2007
Materials scientist Joan Redwing is pursuing an understanding of the Group III Nitrides, and gallium nitride thin films in particular, that are used for LEDs and many electronic applications.
News - 26 May 2009
Over the past 15 years, the availability of high quality sapphire and silicon carbide substrates has enabled the rapid growth of the gallium nitride device (mainly high-brightness LED) market to $4.6...
News - 18 Apr 2010
Transistors, the cornerstone of electronics, are lossy and therefore consume energy. Researchers from the ETH Zürich and EPF Lausanne have developed transistors targeting high switching speeds...
News - 22 Jan 2015
Solar-Tectic LLC announced today that research it funded has led to a breakthrough technology which will be published in the February 1 2015 edition of the journal Materials Letters.
The title of...
News - 4 Oct 2007
AIXTRON AG is pleased to announce the successful start-up of an AIXTRON 200/4 RF-S epitaxy reactor at Tokuyama, Japan. The system is used for the development and production of AlGaN based ultra-violet...
News - 22 Sep 2009
AIXTRON AG announced today that in the third quarter 2009 the Indian Institute of Science (IISc), India placed an order for one AIX 200/4 RF-S R+D MOCVD reactor. It will be delivered in the first...
News - 10 Mar 2009
In the past decade, Group III-nitride materials have been widely used for visible and ultraviolet light emitting diodes and blue, violet laser diodes. Most of these optoelectronic devices are...
News - 23 Nov 2007
Technologies and Devices International, Inc. (TDI), a privately held Maryland corporation, announced today that it has been awarded a United States Patent, US 7,279,047 B2, the latest in a series of...