Nanoelectronics News

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Gentle Techniques Used to Create Nanocapacitors

Electronics are getting smaller all the time, but there's a limit to how tiny they can get with today's materials. Researchers now say, however, that they have developed a way to shrink capacitors — key components that store energy — even further, which could accelerate the development of more compact, high-performance next-gen devices. The study appears in the journal ACS Nano.

From American Chemical Society 21 Feb 2014

Toshiba Introduces Client SSDs Integrating NAND Chips Fabricated with 19nm Second-Generation Process Technology

Toshiba Corporation today announced the launch of the “HG6 series” of client SSDs integrating NAND chips fabricated with 19nm second-generation process technology. Shipping will start from March.

20 Feb 2014

Metal Oxide Shell Coating Increases Life Span of Nanoelectronics

The debut of cyborgs who are part human and part machine may be a long way off, but researchers say they now may be getting closer. In a study published in ACS' journal Nano Letters, they report development of a coating that makes nanoelectronics much more stable in conditions mimicking those in the human body.

From American Chemical Society 20 Feb 2014

Standard Chip-Making Processes Can Be Used to Fabricate Low Power Photonic Devices

The future of computing may lie not in electrons, but in photons – that is, in microprocessors that use light instead of electrical signals. But these so-called photonic devices are typically built using customized methods that make them difficult and expensive to manufacture.

20 Feb 2014

IHP Fabricates HBT Made from Nanoscale SiGe Alloy Embedded Within a Silicon Transistor

A research collaboration consisting of IHP-Innovations for High Performance Microelectronics in Germany and the Georgia Institute of Technology has demonstrated the world's fastest silicon-based device to date. The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium chips by about 200 GHz.

20 Feb 2014

Cima NanoTech Announce Commercial Production of Large Format Conductive Films for Touchscreen Displays

Cima NanoTech, a smart materials company and developer of the disruptive SANTE® self-assembling nanoparticle technology for transparent conductors, today announced successful commercial production and sales of its hi...

19 Feb 2014

Researchers Develop 64-Bit Memory Array Using Flexible Carbon Nano Material and Organo-Polymer Compound

With the introduction of curved smartphones, flexible electronic goods are gradually moving to the center stages of various markets. Flexible display technology is the culmination of the latest, cutting-edge electric cell device technology. Developing such products, however, requires not only a curved display, but also operational precision of other parts, including the memory, in a flexible state.

19 Feb 2014

First 28-nm Flash Memory IP for Microcontrollers Developed using 28-nm Process Technology

Renesas Electronics Corporation (TSE: 6723), a premier provider of advanced semiconductor solutions, today announced that it has developed the industry's first 28-nanometer (nm) flash memory intellectual property (IP) for microcontrollers (MCUs) using a 28 nm process technology.

19 Feb 2014

Glasgow's James Watt Nanofabrication Centre Builds Multi-Million Pound Deposition and Analysis Cluster with Oxford Instruments

Leaders in high technology systems Oxford Instruments have recently received a multi-million pound order for a complex deposition and analysis cluster system from the James Watt Nanofabrication Centre at the University of Glasgow.

From Oxford Instruments Plasma Technology 18 Feb 2014

World’s Most Sophisticated W-Band Integrated Circuit Presented at ISSCC

TowerJazz, the global specialty foundry leader, announced today that researchers at the University of California, Irvine’s (UCI’s) Nanoscale Communication Integrated Circuits (NCIC) Labs presented results from the world’s most sophisticated integrated circuit at W-band (75-110GHz) comprising a 9-element fully integrated direct-detection-based receiver (RX) array at the IEEE International Solid-State Circuits Conference (ISSCC).

18 Feb 2014

Nanoelectronics News

Gentle Techniques Used to Create Nanocapacitors

Toshiba Introduces Client SSDs Integrating NAND Chips Fabricated with 19nm Second-Generation Process Technology

Metal Oxide Shell Coating Increases Life Span of Nanoelectronics

Standard Chip-Making Processes Can Be Used to Fabricate Low Power Photonic Devices

IHP Fabricates HBT Made from Nanoscale SiGe Alloy Embedded Within a Silicon Transistor

Cima NanoTech Announce Commercial Production of Large Format Conductive Films for Touchscreen Displays

Researchers Develop 64-Bit Memory Array Using Flexible Carbon Nano Material and Organo-Polymer Compound

First 28-nm Flash Memory IP for Microcontrollers Developed using 28-nm Process Technology

Glasgow's James Watt Nanofabrication Centre Builds Multi-Million Pound Deposition and Analysis Cluster with Oxford Instruments

World’s Most Sophisticated W-Band Integrated Circuit Presented at ISSCC

Electron-Phonon Interactions Boost 2D Semiconductor Conductivity

New Nanomaterial Offers Sustainable Drinking Water Solution

Carbon Nanofibers Boost Strength and Durability of Fiber Composites

Nano-Formulations Boost Plant Growth and Inhibit Nematode Production

Rapid Biomimetic Nanovaccine for Personalized Cancer Therapy

Enhancing Slurry Stability in Lithium-Ion Batteries with Turbiscan Technology

PiFM and its Role in Nanoscale Chemical Imaging

Conversations on AFM: How AI is Automating Scanning Probe Microscopy

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Ultimate Guide to Nanoscale Polymer Analysis with Photothermal AFM-IR

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