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New Material Could One Day Provide Dramatically Faster, More Efficient Computer Chips

Move over, silicon-it may be time to give the Valley a new name. Physicists at the Department of Energy's (DOE) SLAC National Accelerator Laboratory and Stanford University have confirmed the existence of a type of material that could one day provide dramatically faster, more efficient computer chips.

15 Jun 2009

Bayer MaterialScience Signs Technology and Patent License Agreement with Add-Vision

Bayer MaterialScience AG signed a technology and patent license agreement with Add-Vision Inc., a Delaware corporation based in Scotts Valley, California. The agreement grants Bayer MaterialScience and its affiliates certain rights to manufacture and sell flexible polymer organic light-emitting diode (P-OLED) displays using Add-Vision's technology and intellectual property (IP) portfolio.

From Covestro AG 15 Jun 2009

New Way to Precisely Control the Fabrication of Stretchable Electronics

A study of stickers peeling from windows could lead to a new way to precisely control the fabrication of stretchable electronics, according to a team of researchers including one at MIT. Stretchable electronics, which...

15 Jun 2009

Experts Showcase New Research Results in Advanced Gate Stack, High Mobility Channels, and 3D Interconnect TSVs

SEMATECH, the global consortium of leading semiconductor manufacturers, has continued leadership in developing, screening, and characterizing new materials, tools, and processes that enable CMOS scaling and emerging tech...

15 Jun 2009

Lightwave Logic Re-Confirms Earlier Test Results of Perkinamine Class Materials

Lightwave Logic, Inc. (OTC Bulletin Board: LWLG), a development stage company, moving toward prototype demonstration and commercialization of its high-activity, high-stability organic polymers for applications in electro...

14 Jun 2009

Significant Advance in the Development of Gate Stack and Interlayer with High Carrier Mobility

Toshiba Corporation (TOKYO:6052) today announced a significant advance in the development of a gate stack and interlayer with high carrier mobility that can be applied to advanced metal-insulator-semiconductor field-effect transistors (MISFETs) in future generations of LSIs.

14 Jun 2009