Oxford Instruments excited to announce the launch of CrystalFlex. This multi-wafer Hydride Vapour Phase Epitaxy (HVPE) reactor provides superb epitaxial growth control, and offers a cost effective route for the production of high quality, crack free epitaxial GaN, AlGaN and AlN single crystal materials.
As a world leading company we boast over 25 years experience in the development of HVPE processes and techniques for the production of novel Group III nitrides compound semiconductors.
This equipment is designed for R&D or full scale production of Group III nitrides with the focus on process stability, reproducibility, and optimal source materials usage. The flexible reactor configuration enables end users to grow a variety of Group III nitrides with various thicknesses.