Samsung Mass Produces eMCPs Featuring 30 nm LPDDR2 DRAM and 20 nm NAND Flash e-MMC

Samsung Electronics has begun mass production of embedded multi-chip package (eMCP) memory for the growth-oriented entry- to mid-level smartphone market.

The new eMCP memory solutions are offered in a broad array of densities. They are manufactured in packages comprising 20-nm-class NAND flash memory-based 4 GB e-MMC for data storage and 30-nm-class LPDDR2 DRAM with options of 256, 512 or 768 MB for assisting superior-performance mobile device systems. They offer simple design process to handset developers, while delivering longer battery life and improved performance to entry- to mid-level smartphones.

With the 30-nm-class LPDDR2 DRAM chip, the new eMCP helps improving the performance of entry- to mid-level smartphones by offering 1,066 Mbps of data transmission speed, a performance value two times higher than that of earlier mobile DRAMs.

On comparison with a 40-nm- class LPDDR2 DRAM, the 30-nm-class LPDDR2 DRAM improves performance by roughly 30%, while reducing power consumption by 25%. The 30-nm-class process technology increases chip manufacturing productivity by 60% when compared to the 40-nm-class process technology.

Samsung started offering superior-performance 30-nm-class 4 Gb LPDDR2 DRAM in March 2011. The company offered high-density solutions, including 2 GB LPDDR2 package stacking four 4 Gb LPDDR2 DRAM in October 2011. In the same month, the company began utilizing 30-nm-class LPDDR2 DRAMs for its eMCPs. The company released its earlier eMCPs featuring 32 GB eMMC memory based on 20-nm-class NAND flash and 1 GB 30-nm-class LPDDR2 DRAM for the high-end smartphone market.


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