Pioneering Research at SUNY College of Nanoscale Science and Engineering Presented at Lithography Conference

Continuing to support the vision and leadership of Governor Andrew Cuomo through which New York is being transformed into the worldwide epicenter for nanotechnology, the SUNY College of Nanoscale Science and Engineering (CNSE) announced today that pioneering scientific research conducted at CNSE’s Albany NanoTech Complex has contributed to nearly 50 technical papers being presented at the world’s preeminent lithography conference.

“As further testimony to Governor Andrew Cuomo’s strategic blueprint that is establishing New York as the leading global hub for high-tech innovation and manufacturing, CNSE is delighted to showcase the industry-leading research capabilities at its world-class Albany NanoTech Complex as part of the world’s foremost lithography conference,” said CNSE Executive Vice President of Innovation and Technology and Vice President for Research Dr. Michael Liehr. “The papers presented by CNSE’s faculty and researchers, along with its global corporate partners, highlight the success of this unique public-private model in shattering scientific boundaries and driving critical advances to meet the needs of industry.”

The research conducted at CNSE to be featured at the SPIE 2013 Advanced Lithography conference is the culmination of efforts by both CNSE scientists and the college’s global corporate partners, including a number of papers that showcase joint research resulting from the NanoCollege’s unique collaborative partnerships. Presenting corporate partners include IBM, GLOBALFOUNDRIES, SEMATECH, Applied Materials, Tokyo Electron and Vistec Lithography.

Forum papers focus on a variety of research topics that are critical to moving the nanoelectronics industry forward and overcoming technical challenges, including extreme ultraviolet (EUV) micro-exposure tool use at CNSE; EUV photoresist development and imaging; EUV mask blank fabrication; outgassing effects in EUV photoresist; eBeam, X-ray, and optical metrology techniques; directed self-assembly used in finFET fabrication; phase defect detection in EUV mask blanks; phase shift focus monitors; KrF hybrid photo resist development; LER measurement and mitigation; multilayer deposition techniques for EUV mask blanks; resolution improvement using pupil filtering in EUV lithography; the out-of-band illumination effect on EUV lithography; and EUV mask inspection techniques.

Also at the conference, SPIE will officially recognize CNSE Empire Innovation Professor of Nanoscale Science Dr. Alain Diebold as an SPIE Fellow. He is one of only 69 members of distinction to earn the honor in 2013, which highlights technical achievements and service to the general optics community, as well as service to the society.

Known as the world’s leading nanoelectronics lithography conference and exhibition, the 39th annual SPIE Advanced Lithography conference is being held February 24 through 28 in California at the San Jose Convention Center and San Jose Marriott.


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