Posted in | News | Graphene

Bernal Stacking Can Alter Graphene’s Electrical Properties

A team of researchers from the University of California, Riverside have established that the electrical properties of graphene can be altered by adopting a technique called Bernal trilayer stacking.

In Bernal-stacked trilayer (ABA), the top (third) sheet is exactly on top of the lowest sheet. In rhombohedral-stacked (ABC) trilayer, the top sheet is shifted by the distance of an atom, so that the top (third) sheet and the lowest sheet form a Bernal stacking as well. Credit: Lau lab, UC Riverside.

Graphene is made up of carbon atoms that are arranged in the shape of hexagonal rings and has high electrical and thermal conductivity, thus making it the ideal material to be used in semiconductors and computers.

Graphene sheets can easily be stacked upon one another through Bernal stacking due to its planar structure. Under regular Bernal stacking the corner of the hexagon formation of the second sheet is placed in the middle of the bottom sheet. Researchers adopted a new method of stacking called the Bernal trilayer stacking where three sheets of graphene were arranged in such a manner that the top sheet is directly below the lowest sheet. It was discovered that devices that had graphene sheets arranged in this way displayed electricity conductivity while the other devices displayed insulation.

However, if the arrangement was slightly shifted, the sheets displayed insulation. The researchers used Raman spectroscopy to analyze the devices that had the desired stacking order. The research team also plans to analyze the gap that arises due to the stacking arrangement as it will help in the engineering of band gaps in graphene electronics. This study was sponsored by grants from the Office of Naval Research, the Focus Centre for Functional Engineered Nano Architectonics and the National Science Foundation.



Please use one of the following formats to cite this article in your essay, paper or report:

  • APA

    University of California at Riverside. (2019, February 12). Bernal Stacking Can Alter Graphene’s Electrical Properties. AZoNano. Retrieved on May 23, 2024 from

  • MLA

    University of California at Riverside. "Bernal Stacking Can Alter Graphene’s Electrical Properties". AZoNano. 23 May 2024. <>.

  • Chicago

    University of California at Riverside. "Bernal Stacking Can Alter Graphene’s Electrical Properties". AZoNano. (accessed May 23, 2024).

  • Harvard

    University of California at Riverside. 2019. Bernal Stacking Can Alter Graphene’s Electrical Properties. AZoNano, viewed 23 May 2024,

Tell Us What You Think

Do you have a review, update or anything you would like to add to this news story?

Leave your feedback
Your comment type

While we only use edited and approved content for Azthena answers, it may on occasions provide incorrect responses. Please confirm any data provided with the related suppliers or authors. We do not provide medical advice, if you search for medical information you must always consult a medical professional before acting on any information provided.

Your questions, but not your email details will be shared with OpenAI and retained for 30 days in accordance with their privacy principles.

Please do not ask questions that use sensitive or confidential information.

Read the full Terms & Conditions.