Strategic Business Report on Global Thin Layer Deposition Equipment Market

Research and Markets now offers a comprehensive report titled ‘Thin Layer Deposition Equipment - Global Strategic Business Report.’

The business report discusses the global market for thin layer deposition equipment in the US currency. It provides analytical data for equipment integrating two main deposition methods, chemical vapor deposition and physical vapor deposition.

The strategic report provides market analysis of chemical vapor deposition and physical vapor deposition systems and their corresponding end-use sectors. Medical, industrial, cutting tools and microelectronics are the end-use sectors of the chemical vapor deposition systems, while optics, data storage, medical, specialty packaging, industrial and energy, cutting tools and microelectronics are the end-use sectors of the physical vapor deposition systems.

Geographic markets covered in the report include the United States, Europe, Asia-Pacific, Japan, Canada and Rest of World. The report includes forecasts and annual estimates for the period between 2009 and 2017. It also includes a six-year historic analysis for these markets. Market analytics and data are obtained from primary and secondary research.

Key topics covered in the report include introduction, methodology & product definitions, industry overview, competitive scenario, end use markets - applications & trends, product/technology overview, recent industry activity, product innovations/introductions, focus on select players and global market perspective.

Companies profiled in the report include Veeco Instruments, Vapor Technologies, ULVAC Technologies, Ultramet, Tokyo Electron, Ti-Coating, Tecvac, Silicon Genesis, Seki Technotron USA, RIBER, OEM Group, OC Oerlikon, Novellus System, Kokusai Semiconductor Equipment, KDF Electronic & Vacuum Services, Jusung Engineerin, Ionbond, Denton Vacuum, CHA Industries, Canon ANELVA, ASM International, Applied Materials and AIXTRON.

Source: http://www.researchandmarkets.com

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