IBS Launches PULSION, its Brand New Nano Plasma Immersion Ion Implanter

PULSION® is the new robust and versatile Plasma Immersion Equipment designed by IBS. This low or very low energy ion implanter which is a digest of the whole technological know-how of ION BEAM SERVICES allows achieving very small implantation depths.

Product Description

• Substrate size: up to 3OOmm
• Energy: 0-12 keV
• Current: 0,1µA – 50mA
• Process gases: Dopants (BF3, PH3, AsH3 …)

All gases are possible upon request.

• As implanted “junction depth” : Down to 2nm, linear with acceleration voltage
• Low metal contamination: < 1E11 / cm²
• Uniformity and reproducibility:

σ = 2,5 % on 200 mm (BF3 0,5 kV 3000 §Ù/sq)

σ = 1,4 % on 300 mm (BF3 10 kV 50 §Ù/sq)

• Plasma density: 107 - 1010 cm-3
• Working pressure: 10-4 - 10-2 mbar
• Continuous or pulsed mode

Applications

Due to these characteristics, this brand new equipment is especially dedicated to semiconductors applications. Successful process tests have been done in the following fields:

1. Ultra Shallow Junctions: S/D extensions, detectors;
2. Highly Doped Surfaces, low cost Doping: Poly Silicon Doping, Power Devices, Solar cells;
3. 3D Doping, Trench doping: Finfets, Memories;
4. Surface Modification for Nanotechnology: Nanocristals, high K, workfunction modification.

Main Advantages

With regards to classical beamline ion implanters, PULSION® main advantages lie in its inner characteristics:

1. Great flexibility in doping penetration depth due to a large energy range (from very low to medium);
2. Low cost of ownership and thus a low cost doping;
3. 200-300mm Cluster type Equipment;
4. Reduced footprint.