Sep 19 2007
Toppan Photomasks, Inc. and CEA-Leti, a leading global technology research and development organization, announced today they have signed a joint development agreement to explore double patterning techniques for extending 193nm lithography to next-generation semiconductors.
Added to the ITRS in 2006, double patterning is a resolution enhancement technique (RET) that effectively doubles the pitch, the most difficult resolution limit of any lithography. It is viewed as a leading technology option for extending 193nm immersion lithography to the 32nm node without requiring the industry to invest in costly new tools. The technique also is viewed as a bridge to EUV technology, which is not expected to be available for volume production until approximately 2013.
CEA-Leti has formed a consortium to address the challenges to making double patterning available to chip makers, and Toppan’s participation in the consortium reflects its commitment to helping its partners achieve their internal technology goals and to supporting the ITRS.
“Understanding the challenges of double patterning such as CD and placement control and the additional requirements this technology places on mask manufacturing is key to successfully implementing a double patterning strategy for our customers,” said Franklin Kalk, executive vice president and chief technology officer of Toppan Photomasks. “Our partnership with CEA-Leti combines our OPC models, OPC application to patterns and advanced mask manufacturing with a leading-edge research institute’s proven expertise to assure that photomask technology for double patterning is available when our customers are ready for it.”
“This partnership with Toppan is a critical part of our consortium’s efforts to develop all aspects of double patterning and it underscores our commitment to work with leading global technology companies to provide chipmakers with superior advanced lithography technology,” said Olivier Demolliens, head of the Nanotec Division at CEA-Leti.
The Toppan-CEA Leti partnership, one of several double-patterning development projects that Toppan is participating in, will leverage the industry-leading capabilities of Toppan’s global network of manufacturing and research facilities. The photomask fabrication and analysis will be done at Toppan’s facility in Dresden, Germany.