Indium Gallium Arsenide Compounds Created Using HVPE Technique

Green-blue- violet light emitters based on III-nitride compounds are typically fabricated utilizing InGaN alloys in active region of the optoelectronic devices. Most of these materials are grown by metalorganic chemical vapour deposition (MOCVD) and molecular beam epitaxy (MBE).

Room Temperature photo-luminescence spectra of HVPE grown materials: GaN, InN, and InGaN with various compositions.

TDI, an Oxford Instruments company, has recently advanced the Hydride Vapour Phase Epitaxy (HVPE) technology to the growth of InGaN. HVPE is best known for its capability to grow low defect, crack free, high quality quasi bulk GaN and AlN materials at a significantly high growth rate of up to 100 µm/hour.

Based on GaCl3-InCl3-NH3 system, the new HVPE technique developed by the team at Oxford Instruments-TDI is able to precisely control the growth rate of InGaN down to 1-2 µm/hour and Indium content of up to 43%.

The technique of X-ray diffraction reciprocal space mapping (RSM) is used to study the strain relaxation of the InGaN layers. The studies show that low In-content InxGa1-xN (x~0.08 to 0.15) layers were either fully strained or partially relaxed, with relaxation strongly depending on layer thickness and full relaxation for higher In-content layer (x~0.2 to 0.4). The results were recently presented at the Second International Symposium on Growth of III-Nitrides in Izu, Japan and the 2008 International Workshop on Nitride semiconductors in Montreux, Switzerland.

“This study further confirms the ability of HVPE to grow high quality InGaN layers and extend its capability for blue-green LEDs production in the near future,” commented by Dr. Alexander Syrkin, Deputy Director and team leader for the InGaN project at TDI.

Recently, the study on the growth of InGaN by HVPE at Oxford Instruments-TDI was rewarded with a substantial funding from a US government agency. “We are very excited and honoured to be part of the US government research program. We strongly believe that we are just at the edge of discovering the substantial potential of the HVPE technology for the solid state lightning industry in the near future,” commented by Bernard Scanlan, General Manager at Oxford Instruments-TDI.

Tell Us What You Think

Do you have a review, update or anything you would like to add to this news story?

Leave your feedback
Your comment type

While we only use edited and approved content for Azthena answers, it may on occasions provide incorrect responses. Please confirm any data provided with the related suppliers or authors. We do not provide medical advice, if you search for medical information you must always consult a medical professional before acting on any information provided.

Your questions, but not your email details will be shared with OpenAI and retained for 30 days in accordance with their privacy principles.

Please do not ask questions that use sensitive or confidential information.

Read the full Terms & Conditions.