Article - 27 Oct 2010
At Oxford Instruments Plasma Technology ave recently optimized the growth procedure to improve structural properties and surface morphology of thick AlN layers deposited via hydride vapor-phase...
Article - 8 Feb 2006
The kSA MOS Ultra-Scan is a flexible, high-resolution scanning curvature and stress measurement system. Based on proven kSA MOS technology, this fully integrated ex-situ tool maps the curvature of...
News - 28 Aug 2008
At Ferdinand-Braun-Institute (FBH) in Berlin
LayTec's EpiCurve®TT HR (High Resolution) sensor is successfully used
to optimise the external quantum efficiency and the emission wavelength...
News - 7 Dec 2010
Today at the International Electron Devices Meeting in San Francisco imec presents an ultra-thin hybrid AlGaN-on-Si-based extreme ultraviolet (EUV) imager with only 10µm pixel-to-pixel pitch. The...
News - 23 Nov 2007
Technologies and Devices International, Inc. (TDI), a privately held Maryland corporation, announced today that it has been awarded a United States Patent, US 7,279,047 B2, the latest in a series of...
News - 8 Jan 2009
IMEC, Europe's leading independent
research center in the field of nanoelectronics, and AIXTRON, the world leader
in metal-organic chemical-vapor deposition (MOCVD) equipment, have...
News - 31 Oct 2008
At the International Workshop on Nitride Semiconductors (IWN) in Switzerland
on 6–10 October, Prof. Misaichi Takeuchi of the Ritsumeikan University,
Japan, presented in-situ curvature...
News - 4 Jun 2008
Europe's leading independent research center in the field of
nanoelectronics, and AIXTRON, the world leader in
metal-organic chemical-vapor deposition (MOCVD) equipment, have
News - 10 Sep 2009
Our society is insatiable as far as the transfer of data is concerned. Consequently,
increasingly faster and cheaper transistors are being developed. In row in recent
months, researchers from...
News - 4 Oct 2007
AIXTRON AG is pleased to announce the successful start-up of an AIXTRON 200/4 RF-S epitaxy reactor at Tokuyama, Japan. The system is used for the development and production of AlGaN based ultra-violet...