SEMATECH Experts Report Progress on Enabling EUVL

SEMATECH and International SEMATECH Manufacturing Initiative (ISMI) experts will present world-leading research and development results on extreme ultraviolet (EUV) manufacturability and extendibility, alternative lithography, and related areas of metrology at the SPIE Advanced Lithography 2009 conferences on February 22-27 at the San Jose Convention Center and Marriott in San Jose, CA.

SEMATECH engineers will report their progress on assessing EUV lithography (EUVL) manufacturability and on advancing EUVL extendibility and alternative lithography and will showcase some of their findings in 12 papers demonstrating breakthrough results in exposure tool capability, resist advances, defect-related inspection, reticle handling, and nanoimprint.

"We are enthusiastic about sharing our progress on some of the most critical determiners for the development of EUV infrastructure," said Bryan Rice, director of lithography at SEMATECH. "SEMATECH's leadership in enabling EUVL pilot line readiness and in researching new techniques for advancing EUV extendibility and alternative lithography, coupled with access to the full-field exposure tool, located at the University at Albany's College of Nanoscale Science and Engineering, demonstrate how our research continues to support EUV readiness for the 22 nm half-pitch node."

In addition to the EUV results, ISMI engineers will present on critical dimension-scanning electron microscopy (CD-SEM) metrology and process control. ISMI's metrology program is focused on the 32 nm and 22 nm generations, to facilitate lithographic innovation, improve manufacturing productivity, and reduce manufacturing costs.

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