Olympus Integrated Technologies America has released a new 3DIR Metrology and Defect Review System at the SEMICON West 2011 that is taking place in San Francisco from July 12 to July 14, 2012.
The metrology system utilizes laser scanning microscopy to measure the parameters of three-dimensional stacked integrated circuits post bonding. It measures alignment points at the chosen bonded wafer die, saves data and images, and sums up the results.
The confocal IR laser scanning microscopy technique monitors numerous post bond parameters such as bonding interface quality including post- and pre-bond defect review and inspection, variations in bonding interface thickness, and accuracy in overlay alignment. The microscope’s confocal feature allows creation of three-dimensional images of the bonded wafer structure and interface and enables thin optical sectioning in the Z plane. The three-dimensional reconstruction generates sections in the XZ plane to offer a profile of an imaged feature or structure that can be measured. The confocal capability also enables the microscope to make XZ measurements at the wafer’s numerous points. This offers information on the thickness uniformity of the bond interface.
With the help of the IR microscope imaging capability, automatic scanning of bonded wafers is done at a low range of magnification. The images are linked to each other to form one wafer image. Since the wafer scan is carried out using an IR microscope, the combined images can be zoomed and viewed for finer details. The image can be imaged, rescanned, or reviewed by utilizing the IR microscope with pixel resolution of 0.14µm and objective magnifications of 90X.
Source: http://www.olympus-ita.com/