Posted in | Carbon Nanotubes | Graphene

IBM Scientists Display Carbon Nanotube- and Graphene-Based Prototypes for Computing Applications

At the IEEE International Electron Devices Meeting, IBM researchers have demonstrated their research that involves the incorporation of novel logic architectures and materials into wafers having a diameter of 200 mm, paving the way to innovative technologies for the integration of consumer electronics, communication and computing.

Racetrack memory has the advantages of solid-state memory and magnetic hard drives to address the issues related to memory and shrinking devices. The IBM research team has developed a racetrack memory device incorporated with CMOS technology on a 200 mm wafer, opening the door to enhance the dependability and density of racetrack memory utilizing three-dimensional architectures and magnetized racetracks. This novel innovation lays the foundation to develop an advanced data-centric computing device capable of storing large amounts of data that can be accessed within a billionth of a second.

The research team has displayed the first-of-its-kind scale carbon nanotube transistor having a channel length of sub-10 nm, with a performance far better than the existing silicon devices having these length scales. These devices having a gate length of less than 10 nm, will play a major role in future computing technology. These scaled carbon nanotube devices have also demonstrated their superior off-state behavior.

At the meeting, the IBM scientists have also displayed first-of-its-kind graphene device compatible with CMOS technology. The graphene device operates at a frequency of up to 5 GHz and demonstrates high thermal stability at temperatures up to 200° C, paving the way to develop high-frequency devices that can function under harmful radiation and temperature environments such as medical and security fields. The team designed a special embedded gate structure in place of depositing gate dielectric on the surface of inert graphene, offering high device output on 200 mm wafers.


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