Posted in | Nanoelectronics

Joint Venture to Develop NAND Nano-scale Flash Memory

Intel and Micron Technology have jointly unveiled IM Flash Singapore. The US$3 billion unit will hire 1200 persons and manufacture the company' 25nm NAND Flash memory. The announcement was made at an event, which was attended by the Singapore government officials including Singapore Prime Minister Lee Hsien Loong.

The new facility started the initial pilot manufacture of 25nm NAND Flash memory in mid-2010, and is projected to begin full scale manufacture by end of 2011.

According Chen Kok Sing, IM Flash Singapore managing director, the facility  produced the first wafer a month earlier than  scheduled, ensuring early delivery to the two parent companies.

The collaboration develops products at two other sites, Lehi, Utah, and Micron's Manassas, Virginia. The companies recently  launched the 20nm NAND Flash memory process technology that will be deployed at the new Singapore facility during 2011.


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