Online research website Research and Markets has released a report titled “Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices”.
The report was formulated from the papers submitted at the 6th International Workshop on Semi-conductor-on-Insulator (SOI) Materials and Devices, which was held at Kyiv, Ukraine from October 24-28, 2010.
The report is divided into four sections and covers specific topics such as the technology used in SOI devices and structures, physics of latest SOI devices, SOI sensors and MEMS, nanodots, nanofilms and nanowires. While the first section of the report talks about a wide range of structures that are based on SemOI like SIC-on-Si oxide, ZnO-on-Insulators and graphite inner films which are fabricated by ion implementation, the second section of the report talks introduces latest devices that are based on impact ionization that are closer to the source junction, the electric properties of SOI MOSFETs with LaLuO3 high-k gate dielectric, charge transport modelling in nano-scale SOI MOSFETs and studying the effects of neutron on the behaviour of SOI devices that measure in nano-metres. The third section of the report talks about the properties and applications of a wide range of MEMs and SOI sensors and the fourth section talks about the properties of structures that have quantum dimensions such as nanodots and nanowires and also talks about how they are fabricated.
Source: http://www.researchandmarkets.com