Jan 27 2009
NIL Technology and IMS Chips have started a collaboration to efficiently combine their capabilities related to electron beam lithography. Whereas NIL Technology possesses key competences within production of stamps for NIL through the operation of a state-of-the-art Gaussian shaped electron beam writer, IMS Chips, a center of competence for beam lithography has developed various patterning technologies for wafers, masks and stamps using a variable shape electron beam writer.
The direct access to both Gaussian shaped and variable shaped electron beam lithography (EBL) puts the collaborators in a unique position to combine high speed and high resolution definition of nanostructures. Complex stamps for NIL can be produced with very high quality at competitive prices. The unique combination of these EBL technologies put NIL Technology and IMS Chips in the same league as less than a handful of other companies around the world who also use combined EBL.
Theodor Kamp Nielsen, CEO of NIL Technology and Mathias Irmscher, Head of Nanopatterning Division of IMS Chips, comment, “We see this collaboration as a giant step on our path to fulfil the present and future requirements from many companies working with NIL. They are moving towards more complex designs which require more and more complex NIL stamps and solutions. The combined use of both state-of-the-art EBL technologies enables us to continue supporting our customers with world-class solutions.”